Fundamentals of Semiconductor Devices

3,000.00

 

Prof. Digbijoy N. Nath

IISc Bangalore

*Additional GST and optional Exam fee are applicable.

SKU: IISc Bangalore Category:

Description

 

This course seeks to cover the basics of semiconductor devices including the physics of energy bands, doping and carrier statistics and transport leading up to the understanding of common semiconductor devices including p-n junctions and their applications, BJTs and MOSFETs. The course will also give a flavour of the basics of compound semiconductors and their devices, and also touch base with opto-electronic devices such as solar cells, photodetectors and LEDs. The course will ensure that undergraduates, college teachers and other interested audience with no background in semiconductors are able to grasp the content. In parallel, the course will consistently seek to engage the audience by giving real-life examples pertaining to the content, and also seek to calibrate the content with respect to practical and commercial technologies which are all around us and which use semiconductor devices. There will be enough food for thought even for advanced learners such as PhD students and active researchers.

INTENDED AUDIENCE

Students pursuing B.E./B.Tech in ECE/EE, or M.Sc Physics

PRE-REQUISITES

High school physics & math, 10+2 physics

INDUSTRY SUPPORT

Semiconductor

ABOUT THE INSTRUCTOR

Digbijoy N. Nath completed his B.E. (Hons) in Electrical and Electronics Engineering from BITS, Pilani (Rajasthan) and PhD in Electrical Engineering from Ohio State University, Columbus specializing in gallium nitride based semiconductor devices. He has been as Assistant Professor at Centre for Nano Science and Engineering (CeNSE) at Indian Institute of Science (IISc), Bangalore since Aug 2014. His research interests lie in wide band gap semiconductor devices for high power & RF electronics/deep-UV opto-electronics. He has authored/co-authored 46 publications so far. He has been teaching a postgraduate level course Semiconductor Devices and IC Technology for PhD/Masters students at IISc for four years while he has also started a new advanced-level course titled Semiconductor Opto-electronics and Photovoltaics (jointly with another faculty member).

Additional information

Institute

IISc Bangalore

Total hours

30

Certification Process

1. Join the course
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COURSE ENROLMENT FEE: The Fee for Enrolment is Rs. 3000 + GST

2. Watch Videos+Submit Assignments
After enrolling, learners can watch lectures and learn and follow it up with attempting/answering the assignments given.

3. Get qualified to register for exams
A learner can earn a certificate in the self paced course only by appearing for the online remote proctored exam and to register for this, the learner should get minimum required marks in the assignments as given below:

CRITERIA TO GET A CERTIFICATE
Assignment score = Score more than 50% in at least 9/12 assignments.
Exam score = 50% of the proctored certification exam score out of 100
Only the e-certificate will be made available. Hard copies will not be dispatched.”

4. Register for exams
The certification exam is conducted online with remote proctoring. Once a learner has become eligible to register for the certification exam, they can choose a slot convenient to them from what is available and pay the exam fee. Schedule of available slot dates/timings for these remote-proctored online examinations will be published and made available to the learners.

EXAM FEE: The remote proctoring exam is optional for a fee of Rs.1500 + GST. An additional fee of Rs.1500 will apply for a non-standard time slot.

5. Results and Certification
After the exam, based on the certification criteria of the course, results will be declared and learners will be notified of the same. A link to download the e-certificate will be shared with learners who pass the certification exam.

CERTIFICATE TEMPLATE

Course Details

Week 1  :  Importance of semiconductor devices and their diverse applications. Introduction to semiconductors, concept of energy bands and how bands form. Effective mass of electrons, E-k diagram. Concept of holes. Concept of Fermi level, Fermi-Dirac distribution. Doping (extrinsic & intrinsic semiconductor), density of states. 
Week 2  :  Equilibrium electron-hole concentration, temperature-dependence. Carrier scattering and mobility, velocity saturation, Drift-diffusion transport 
Week 3  :  Excess carrier decay & recombination, charge injection, continuity equation, quasi-Fermi level 
Week 4 : p-n junction: static behaviour (depletion width, field profile), p-n junction under forward & reverse bias, current equations, generation-recombination current and reference to typical devices. 
Week 5  :  Zener and avalanche breakdown, Capacitance-voltage profiling, metal/semiconductor junction – Ohmic and Schottky contacts, reference to device applications. 
Week 6 :  MOS capacitor, charge/field/energy bands, accumulation, inversion, C-V (high and low frequencies), deep depletion, Real MOS cap: Flat-band & threshold voltage, Si/SiO2 system. 
Week 7  :  MOSFET: structure and operating principle, derivation of I-V, gradual channel approximation, substrate bias effects, sub-threshold current and gate oxide breakdown. Control of threshold voltage, short channel effects. Moore’s Law and CMOS scaling 
Week 8 : Introduction to compound semiconductors & alloys, commonly used compound semiconductors, heterostructure band diagrams and basics of MODFET & HEMT, introduction to quantum well, applications of heterostructure device technologies 
Week 9  :  BJT: working principle, DC parameters and current components, base transport factor, Early Effect, charge control equation & current gain, need for HBT. Applications of BJTs/HBTs in real-life. 
Week 10 : (Basics of) – transistors for high-speed logic, transistors for high frequency (RF), transistors for high power switching, transistors for memories, transistors for low noise, transistors for the future. 
Week 11 : Solar cells: principle, efficiency, Fill factor, Shockley-Quiesser limit, silicon solar cells, multi-junction solar cell, Photodetectors: operation, figures of merit (responsivity, QE, bandwidth, noise, Detectivity), examples from IR to UV detectors. 
Week 12 : LEDs: working principle, radiative/non-radiative recombination, various types of efficiencies (EQE, WPE, IQE), light extraction and escape cone. Blue LED and the Nobel Prize, visible LEDs and chromaticity.

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